Interconnect structures and methods for back end of the line integration

ABSTRACT

A method of forming a semiconductor structure includes forming a sacrificial conductive material layer. The method also includes forming a trench in the sacrificial conductive material layer. The method further includes forming a conductive feature in the trench. The method additionally includes removing the sacrificial conductive material layer selective to the conductive feature. The method also includes forming an insulating layer around the conductive feature to embed the conductive feature in the insulating layer.

FIELD OF THE INVENTION

The invention relates to semiconductor structures and methods ofmanufacture and, more particularly, to interconnect structures andmethods for back end of the line (BEOL) integration.

BACKGROUND

Generally, semiconductor devices include a plurality of circuits whichform an integrated circuit fabricated on a semiconductor substrate. Acomplex network of signal paths will normally be routed to connect thecircuit elements distributed on the surface of the substrate. Efficientrouting of these signals across the device involves formation ofmultilevel or multilayered schemes, such as, for example, single or dualdamascene wiring structures. The wiring structure typically includescopper (Cu), since Cu based interconnects provide higher speed signaltransmission between large numbers of transistors on a complexsemiconductor chip as compared with aluminum, e.g., Al-basedinterconnects.

Within a typical interconnect structure, metal vias run perpendicular tothe semiconductor substrate and metal lines run parallel to thesemiconductor substrate. Further enhancement of the signal speed andreduction of signals in adjacent metal lines (known as “crosstalk”) areachieved in integrated circuit (IC) product chips by embedding the metallines and metal vias (e.g., conductive features) in a dielectricmaterial having a dielectric constant of less than silicon dioxide.

The damascene processes used in forming interconnect and via structuresface challenges as the size of devices and associated interconnectsshrinks. In typical formation of an interconnect or via, a seed layer isformed on surfaces of a trench prior to forming the conductive material,e.g., copper, etc., in the trench. However, sufficient seed layercoverage on the patterned dielectric is difficult to achieve with ultrathin seed layers, e.g., seed layers having a thickness less than 2 nm.Moreover, void-free plating is becoming difficult due to poor linerand/or seed coverage, and also due to high aspect ratio (AR) challengesfor plating. For example, interconnects and/or vias formed in high ARtrenches may detrimentally experience pinch-offs, voids, etc., if theliner is too thick at the top of the trench or via hole.

Accordingly, there exists a need in the art to overcome the deficienciesand limitations described hereinabove.

SUMMARY

In a first aspect of the invention, a method of forming a semiconductorstructure includes forming a sacrificial conductive material layer. Themethod also includes forming a trench in the sacrificial conductivematerial layer. The method further includes forming a conductive featurein the trench. The method additionally includes removing the sacrificialconductive material layer selective to the conductive feature. Themethod also includes forming an insulating layer around the conductivefeature to embed the conductive feature in the insulating layer.

In another aspect of the invention a method of forming a semiconductorstructure includes forming a first conductive material layer on one of alower interconnect level and a substrate. The method further includesforming first trenches in the first conductive material layer. Themethod also includes filling the first trenches with a first conductorto form first conductive features. The method additionally includesforming a second conductive material layer on the first conductivematerial layer. The method further includes forming second trenches inthe second conductive material layer. The method also includes fillingthe second trenches with a second conductor to form second conductivefeatures. The method additionally includes removing the first and secondconductive material layers leaving the first and second conductivefeatures. The method further includes forming an insulating layer aroundthe first and second conductive features such that the first and secondconductive features are embedded in the insulating layer.

In yet another aspect of the invention, a semiconductor structureincludes an electroplated conductive feature embedded in an insulatinglayer. The structure is devoid of a seed layer between the electroplatedconductive feature and the insulating layer.

In another aspect of the invention, a design structure tangibly embodiedin a machine readable storage medium for designing, manufacturing, ortesting an integrated circuit is provided. The design structurecomprises the structures of the present invention. In furtherembodiments, a hardware description language (HDL) design structureencoded on a machine-readable data storage medium comprises elementsthat when processed in a computer-aided design system generates amachine-executable representation of an interconnect structure whichcomprises the structures of the present invention. In still furtherembodiments, a method in a computer-aided design system is provided forgenerating a functional design model of the interconnect structure. Themethod comprises generating a functional representation of thestructural elements of the interconnect structure.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The present invention is described in the detailed description whichfollows, in reference to the noted plurality of drawings by way ofnon-limiting examples of exemplary embodiments of the present invention.

FIGS. 1-11 show processing steps and structures in accordance withaspects of the invention; and

FIG. 12 is a flow diagram of a design process used in semiconductordesign, manufacture, and/or test.

DETAILED DESCRIPTION

The invention relates to semiconductor structures and methods ofmanufacture and, more particularly, to interconnect structures andmethods for back end of the line (BEOL) integration. In accordance withaspects of the invention, an integration scheme includes forming asacrificial conductive mandrel layer without the use of a seed layer. Inembodiments, a manufacturing sequence proceeds by patterning and etchingof trenches (e.g., via holes, line/wire/interconnect troughs, etc.) inthe sacrificial conductive mandrel layer with or without a cappinginsulator, and electroplating of via/interconnect material onto and intothe sacrificial conductive mandrel layer. The sequence further includesplanarizing (e.g., polishing or etching) the plated material to the topof the sacrificial conductive mandrel layer, and selectively removingthe sacrificial conductive mandrel layer. The sequence continues withthe formation of a dielectric material around the via/interconnectmaterial. Advantageously, the sacrificial conductive mandrel layereliminates the need for a separate seed layer, which alleviates problemsassociated with poor seed layer coverage, seed layer pinch-off of highAR trenches, seed layer-induced void formation, etc. Implementations ofthe invention may be used to form line-first dual damascene structures.

As used herein, the term via refers generally to an electricallyconductive feature running substantially perpendicular to the uppersurface of the semiconductor substrate. Also, the terms line,interconnect, and wire are used interchangeably, and refer generally toan electrically conductive feature running substantially parallel to theupper surface of the semiconductor substrate. Furthermore, as usedherein, the term conductive refers to electrical conductivity, unlessotherwise noted.

FIGS. 1-11 show processing steps and respective structures in accordancewith aspects of the invention. Specifically, FIG. 1 shows a lowerinterconnect level 100 comprising a dielectric layer 101 and at leastone conductive feature 102 formed in the dielectric layer 101. Inembodiments, the at least one conductive feature 102 comprises at leastone via; however, the invention is not limited to vias in the lowerinterconnect level 100, and any desired conductive feature(s), e.g.,vias, lines, etc., may be embedded in the dielectric layer 101.

As depicted in FIG. 1, the lower interconnect level 100 may be formeddirectly or indirectly on a surface of a substrate 105, e.g., anintegrated circuit (IC) substrate. The substrate 105 may include asemiconducting material, an insulating material, a conductive materialor any combination thereof. When the substrate 105 is comprised of asemiconducting material, any semiconductor such as, for example, Si,SiGe, SiGeC, SiC, Ge alloys, GaAs, InAs, InP and other MN or compoundsemiconductors can be used. In addition to these listed types ofsemiconducting materials, the present invention also contemplates casesin which the semiconductor substrate is a bulk substrate and also casesin which the semiconductor substrate is a layered semiconductor such as,for example, Si/SiGe, Si/SiC, silicon-on-insulators (SOIs) or silicongermanium-on-insulators (SGOIs).

When the substrate 105 is an insulating material, the insulatingmaterial can be an organic insulator, an inorganic insulator or acombination thereof including multilayers. When the substrate 105 is aconducting material, the substrate may include, for example, polySi, anelemental metal, alloys of elemental metals, a metal silicide, a metalnitride or combinations thereof including multilayers. When thesubstrate 105 comprises a semiconducting material, one or moresemiconductor devices such as, for example, complementary metal oxidesemiconductor (CMOS) devices can be fabricated thereon.

The dielectric layer 101 may include any interlevel or intralevelinterconnect dielectric material including inorganic dielectrics ororganic dielectrics. The dielectric material may be porous ornon-porous. Some examples of suitable dielectrics that can be used asthe dielectric layer 101 include, but are not limited to, SiO₂,silsesquioxanes, C doped oxides (i.e., organosilicates) that includeatoms of Si, C, O and H, thermosetting polyarylene ethers, ormultilayers thereof. The term “polyarylene” is used in this applicationto denote aryl moieties or inertly substituted aryl moieties which arelinked together by bonds, fused rings, or inert linking groups such as,for example, oxygen, sulfur, sulfone, sulfoxide, carbonyl and the like.

The dielectric material of the dielectric layer 101 typically has adielectric constant that is about 4.0 or less, with a dielectricconstant of about 2.8 or less being more typical. These dielectricsgenerally have a lower parasitic cross talk as compared with dielectricmaterials that have a higher dielectric constant than 4.0. The thicknessof the dielectric layer 101 may vary depending upon the dielectricmaterial used as well as the exact number of dielectrics within thelower interconnect level 100. Typically, and for normal interconnectstructures, the dielectric layer 101 has a thickness from 200 nm to 450nm, although the invention is not limited to these dimensions and anysuitable thickness are also contemplated by the present invention.

FIG. 2 shows the formation of a sacrificial conductive mandrel layer 110on the lower interconnect level 100 in accordance with aspects of theinvention. The sacrificial conductive mandrel layer 110 may be composedof any suitable conductive material that can be used in anelectroplating process, as described in greater detail herein. Inparticular exemplary embodiments, the sacrificial conductive mandrellayer 110 is composed of Al or W/Ta/Ti; although other conductivematerials are also contemplated by the present invention. Thesacrificial conductive mandrel layer 110 may be formed using anysuitable semiconductor manufacturing process, such as chemical vapordeposition (CVD), plasma enhanced chemical vapor deposition (PECVD),sputtering, etc. The sacrificial conductive mandrel layer 110 may beformed with any desired thickness, e.g., vertical height perpendicularto the upper surface of the lower interconnect level 100, depending onthe size, shape, number, and layout of interconnects to be formed in theintegrated circuit.

As additionally depicted in FIG. 2, an optional insulating cap 113(shown in dashed lines) may be formed on top of the sacrificialconductive mandrel layer 110. The insulating cap 113 may be composed ofone or more layers of any suitable electrically insulating material,such as oxide (e.g., SiO₂), nitride, and combinations thereof. Theinsulating cap 113 may be formed using conventional semiconductorfabrication techniques, such as chemical vapor deposition (CVD), plasmaenhanced chemical vapor deposition (PECVD), atomic layer deposition(ALD), and physical vapor deposition (PVD). As described in greaterdetail herein, the insulating cap 113 may be used for preventing theformation of plated conductive material on top of the sacrificialconductive mandrel layer 110, and as a stop in a polishing and/orplanarizing step.

FIG. 3 shows the formation of trenches 115 in the sacrificial conductivemandrel layer 110 in accordance with aspects of the invention. Inembodiments, the trenches 115 are used to define at least oneinterconnect or other conductive features that are later formed inelectrical contact with the at least one conductive feature 102. To thisend, in embodiments, the trenches 115 at least overlap, and preferablyare substantially aligned with, the at least one conductive feature 102.The trenches 115 extend through the entirety of the sacrificialconductive mandrel layer 110 to expose portions of the lowerinterconnect level 100.

The trenches 115 may be formed using conventional material-removaltechniques, such as, for example, reactive ion etching or laserablation, and patterns are defined employing conventional lithographicprocesses, By way of illustration, a lithographic masking and etchingprocess may include, e.g., forming a photoresist material to the topsurface of the sacrificial conductive mandrel layer 110, exposing thephotoresist using a desired pattern of radiation, developing the exposedresist using a resist developer, etching (dry etching such as reactiveion etch (RIE) or wet etching) an opening in the sacrificial conductivemandrel layer 110 through the mask defined by the photoresist, andstripping the resist. In implementations using the optional insulatingcap 113, the trenches 115 are similarly formed through the insulatingcap 113.

As additionally depicted in FIG. 3, an optional seed layer 117 (shown indotted lines) may be formed over the exposed surfaces of the trenches115. The optional seed layer 117 may be formed using conventionalmaterials such as, for example, Cu, CuAl, CuIr, CuTa, CuRh, or otheralloys of Cu, i.e., Cu-containing alloys. The optional seed layer 117may be formed using conventional techniques such as, for example,chemical vapor deposition (CVD), plasma enhanced chemical vapordeposition (PECVD), atomic layer deposition (ALD), and physical vapordeposition (PVD). Depending on the process used in forming the seedlayer 117, the seed layer 117 may additionally be formed on the topsurfaces of the structure (not shown).

FIG. 4 shows the formation of conductive material 120 in the trenches115 in accordance with aspects of the invention. The conductive material120 may be any desired conductive material suitable for forminginterconnects, lines, wires, etc. For example, the conductive material120 may be composed of a metal-containing conductive material such as,for example, Cu, W or Al, with Cu or a Cu alloy (such as AlCu). In aparticular exemplary embodiment, the conductive material 120 is composedof Cu or Au when the sacrificial conductive mandrel layer 110 iscomposed of Al. In another exemplary embodiment, the conductive material120 is composed of Cu when the sacrificial conductive mandrel layer 110is composed of W/Ta/Ti.

In embodiments, the conductive material 120 is formed using anelectroplating process using the sacrificial conductive mandrel layer110 as at least one of a seed material and an anode, e.g., electricalcontact for the electroplating. According to aspects of the invention,there is no need for an additional seed layer (e.g., seed layer 117)since the sacrificial conductive mandrel layer 110 acts as the seedmaterial for the plating process. In this manner, the process mayinclude forming a conductive feature directly on the sacrificialconductive mandrel layer 110 which is devoid of an intermediate seedlayer. As such, implementations of the invention advantageouslyeliminate the extra manufacturing and/or processing steps associatedwith an additional, discrete seed layer. Moreover, implementations ofthe invention also avoid problems associated with poor seed layercoverage, seed layer pinch-off of high AR trenches, seed layer-inducedvoid formation, etc.

In implementations when the optional seed layer 117 is employed, thesacrificial conductive mandrel layer 110 may still be used as an anodein the plating process to provide more reliable cross wafer conduction.The seed layer 117 may be used to adjust the plating process byaffecting the fill from the bottoms and sides of the trenches.

Still referring to FIG. 4, the top surface of the structure may beplanarized following formation of the conductive material 120. Forexample, a chemical mechanical polish (CMP) or any other suitableplanarization technique may be used to remove any overburden, e.g.,conductive material 120 that has formed on top of the sacrificialconductive mandrel layer 110. In implementations using the optionalinsulating cap 113, overburden will not form on the insulating cap 113but may extend upward out of trenches above the top surface of theinsulating cap 113. Accordingly, a CMP may be used to remove theoverburden to a level planar with the insulating cap 113, and one ormore subsequent RIE planarization processes may be used to selectivelyremove the insulating cap 113 and any remaining overburden.

FIG. 5 shows the formation of a second sacrificial mandrel layer 125 onthe sacrificial conductive mandrel layer 110 in accordance with aspectsof the invention. The second sacrificial mandrel layer 125 may be formedin the same manner and using the same materials as the sacrificialconductive mandrel layer 110. Alternatively, the second sacrificialmandrel layer 125 may be composed of a different material than thesacrificial conductive mandrel layer 110. For example, the secondsacrificial mandrel layer 125 may be composed of a different conductivematerial than the sacrificial conductive mandrel layer 110, or mayalternatively be composed of an insulator material. In line-first dualdamascene implementations of the invention, the sacrificial conductivemandrel layer 110 is used to define one or more lines (e.g.,interconnects, wires, etc.) and the second sacrificial conductivemandrel layer 125 is used to define one or more vias contacting the oneor more lines. An insulating cap (not shown) may optionally be formed ontop of the second sacrificial mandrel layer 125, e.g., similar toinsulating cap 113.

FIG. 6 shows the formation of holes 130 in the second sacrificialmandrel layer 125 in accordance with aspects of the invention. Inembodiments, the holes 130 are via holes intended to overlap, andpreferably substantially align with, the conductive material 120 formedin the sacrificial conductive mandrel layer 110. The holes 130 may beformed using conventional material removal techniques such as, forexample, conventional lithographic processes, e.g., masking and etching.In implementations when the second sacrificial mandrel layer 125 iscomposed of the same material as the sacrificial conductive mandrellayer 110, a timed RIE may be used to avoid etching too deeply into thesacrificial conductive mandrel layer 110 in the event of unlanded holes,e.g., holes 130 that do not overlap the conductive material 120. On theother hand, in implementations when the second sacrificial mandrel layer125 is composed of a different material than the sacrificial conductivemandrel layer 110, a selective RIE may be used to stop the etch on thesacrificial conductive mandrel layer 110 and the conductive material120. A seed layer may optionally be formed in the holes 130, e.g.,similar to seed layer 117.

FIG. 7 shows the formation of conductive material 135 in the holes 130in accordance with aspects of the invention. In implementations when thesecond sacrificial mandrel layer 125 is composed of the same material asthe sacrificial conductive mandrel layer 110, the conductive material135 may be formed using similar materials and techniques as used in theformation of conductive material 120. For example, when the secondsacrificial mandrel layer 125 is composed of a conductor, the conductivematerial 135 may be formed using an electroplating process in which thesecond sacrificial mandrel layer 125 acts as a seed material, therebyeliminating the need for an additional seed layer for plating theconductive material 135. On the other hand, in implementations when thesecond sacrificial mandrel layer 125 is composed of a different materialthan the sacrificial conductive mandrel layer 110, another process maybe used to form the conductive material 135, such as CVD, PECVD, etc.

Still referring to FIG. 7, the top surface of the structure may beplanarized following formation of the conductive material 135. Forexample, a chemical mechanical polish (CMP) or any other suitableplanarization technique may be used to remove any overburden, e.g.,conductive material 135, that has formed on top of the secondsacrificial mandrel layer 125.

FIG. 8 shows the removal of the second sacrificial mandrel layer 125 andthe sacrificial conductive mandrel layer 110 to expose the conductivematerial 120 and conductive material 135 in accordance with aspects ofthe invention. In embodiments, the second sacrificial mandrel layer 125and the sacrificial conductive mandrel layer 110 are stripped using awet or dry etch that selectively removes the material of the mandrellayers 110 and 125, while avoiding removing the conductive materials 120and 135 and the materials comprised in the lower interconnect level 100.

Any suitable etch process parameters may be utilized to achieve adesired selectivity based on the materials used in the mandrel layers110 and 125, the conductive materials 120 and 135, and the materialscomprised in the lower interconnect level 100. In a particular exemplaryembodiment, the mandrel layers 110 and 125 are composed of W/Ta/Ti, theconductive materials 120 and 135 are composed of Cu, and the etchprocess for stripping the mandrel layers 110 and 125 comprises a dryetch using XeF₂. In another exemplary embodiment, the mandrel layers 110and 125 are composed of Al, the conductive materials 120 and 135 arecomposed of Au, and the etch process for stripping the mandrel layers110 and 125 comprises a dry etch using HCl. In an even further exemplaryembodiment, the mandrel layers 110 and 125 are composed of Al, theconductive materials 120 and 135 are composed of Cu, and the etchprocess for stripping the mandrel layers 110 and 125 comprises a wetetch using H₃PO₄ (phosphoric acid).

FIG. 9 shows the formation of dielectric material 140 (e.g., electricalinsulating layer) on top of the lower interconnect level 100 and aroundthe conductive materials 120 and 135. The dielectric material 140 maycomprise any suitable dielectric material such as those described abovewith respect to dielectric material 101. The dielectric material 140 maybe formed using conventional semiconductor processing techniques suchas, for example, CVD, PECVD, etc. The top surface of the structure maybe planarized, e.g., using CMP, to expose the tops of the conductivematerial 135.

As depicted in FIG. 9, formation of the dielectric material 140completes an upper interconnect level 143 on top of the upperinterconnect level 100. The upper interconnect level 143 comprises wires145 (e.g., defined by conductive material 120) and vias 150 (e.g.,defined by conductive material 135) that provide electrical pathways toconductive feature 102. The steps described in FIGS. 2-9 may be repeatedas many times as desired to form additional interconnect levels of theintegrated circuit.

FIGS. 10 and 11 show the formation of an optional barrier layer 160 inaccordance with aspects of the invention. As depicted in FIG. 10,starting from the structure shown in FIG. 8, a barrier layer 160 may beformed on the exposed conductive materials 120 and 135 and exposedportions of layer 100. The barrier layer 160, which may comprise siliconnitride or any other insulating material that can serve as a barrier toprevent conductive material from diffusing therethrough can be formed bya deposition process such as, for example, atomic layer deposition(ALD), chemical vapor deposition (CVD), plasma enhanced chemical vapordeposition (PECVD), physical vapor deposition (PVD), sputtering, orchemical solution deposition.

As depicted in FIG. 11, the dielectric material 140 may be formed on thebarrier layer 160, e.g., in the same manner as described above withrespect to FIG. 9. A planarization process, e.g., CMP, may be used toplanarize the dielectric material 140 and simultaneously remove a topportion of the barrier layer 160 to expose the tops of the vias 150.Alternatively, a planarization process, e.g., CMP, may be used toplanarize the dielectric material 140 down to the barrier layer 160, anda subsequent selective RIE may be used to remove the top portion of thebarrier layer 160 to expose the tops of the vias 150.

The steps described in FIGS. 2-9 may be used in a dual damasceneprocess. The invention is not limited to use with dual damasceneprocesses, however, and aspects of the invention may be used, forexample, in a single damascene implementation. For example, using thestructure shown in FIG. 4 as a starting point, the process may comprisestripping the sacrificial mandrel layer 110 and forming the dielectricmaterial 140 (and optionally the barrier layer 160) around the firstconductive material 120, without forming the second sacrificial mandrellayer 125 and second conductive material 135.

FIG. 12 is a flow diagram of a design process used in semiconductordesign, manufacture, and/or test. FIG. 12 shows a block diagram of anexemplary design flow 900 used for example, in semiconductor IC logicdesign, simulation, test, layout, and manufacture. Design flow 900includes processes, machines and/or mechanisms for processing designstructures or devices to generate logically or otherwise functionallyequivalent representations of the design structures and/or devicesdescribed above and shown in FIGS. 1-11. The design structures processedand/or generated by design flow 900 may be encoded on machine-readabletransmission or storage media to include data and/or instructions thatwhen executed or otherwise processed on a data processing systemgenerate a logically, structurally, mechanically, or otherwisefunctionally equivalent representation of hardware components, circuits,devices, or systems. Machines include, but are not limited to, anymachine used in an IC design process, such as designing, manufacturing,or simulating a circuit, component, device, or system. For example,machines may include: lithography machines, machines and/or equipmentfor generating masks (e.g. e-beam writers), computers or equipment forsimulating design structures, any apparatus used in the manufacturing ortest process, or any machines for programming functionally equivalentrepresentations of the design structures into any medium (e.g. a machinefor programming a programmable gate array).

Design flow 900 may vary depending on the type of representation beingdesigned. For example, a design flow 900 for building an applicationspecific IC (ASIC) may differ from a design flow 900 for designing astandard component or from a design flow 900 for instantiating thedesign into a programmable array, for example a programmable gate array(PGA) or a field programmable gate array (FPGA) offered by Altera® Inc.or Xilinx® Inc.

FIG. 12 illustrates multiple such design structures including an inputdesign structure 920 that is preferably processed by a design process910. Design structure 920 may be a logical simulation design structuregenerated and processed by design process 910 to produce a logicallyequivalent functional representation of a hardware device. Designstructure 920 may also or alternatively comprise data and/or programinstructions that when processed by design process 910, generate afunctional representation of the physical structure of a hardwaredevice. Whether representing functional and/or structural designfeatures, design structure 920 may be generated using electroniccomputer-aided design (ECAD) such as implemented by a coredeveloper/designer. When encoded on a machine-readable datatransmission, gate array, or storage medium, design structure 920 may beaccessed and processed by one or more hardware and/or software moduleswithin design process 910 to simulate or otherwise functionallyrepresent an electronic component, circuit, electronic or logic module,apparatus, device, or system such as those shown in FIGS. 1-11. As such,design structure 920 may comprise files or other data structuresincluding human and/or machine-readable source code, compiledstructures, and computer-executable code structures that when processedby a design or simulation data processing system, functionally simulateor otherwise represent circuits or other levels of hardware logicdesign. Such data structures may include hardware-description language(HDL) design entities or other data structures conforming to and/orcompatible with lower-level HDL design languages such as Verilog andVHDL, and/or higher level design languages such as C or C++.

Design process 910 preferably employs and incorporates hardware and/orsoftware modules for synthesizing, translating, or otherwise processinga design/simulation functional equivalent of the components, circuits,devices, or logic structures shown in FIGS. 1-11 to generate a netlist980 which may contain design structures such as design structure 920.Netlist 980 may comprise, for example, compiled or otherwise processeddata structures representing a list of wires, discrete components, logicgates, control circuits, I/O devices, models, etc. that describes theconnections to other elements and circuits in an integrated circuitdesign. Netlist 980 may be synthesized using an iterative process inwhich netlist 980 is resynthesized one or more times depending on designspecifications and parameters for the device. As with other designstructure types described herein, netlist 980 may be recorded on amachine-readable data storage medium or programmed into a programmablegate array. The medium may be a non-volatile storage medium such as amagnetic or optical disk drive, a programmable gate array, a compactflash, or other flash memory. Additionally, or in the alternative, themedium may be a system or cache memory, buffer space, or electrically oroptically conductive devices and materials on which data packets may betransmitted and intermediately stored via the Internet, or othernetworking suitable means.

Design process 910 may include hardware and software modules forprocessing a variety of input data structure types including netlist980. Such data structure types may reside, for example, within libraryelements 930 and include a set of commonly used elements, circuits, anddevices, including models, layouts, and symbolic representations, for agiven manufacturing technology (e.g., different technology nodes, 32 nm,45 nm, 90 nm, etc.). The data structure types may further include designspecifications 940, characterization data 950, verification data 960,design rules 970, and test data files 985 which may include input testpatterns, output test results, and other testing information. Designprocess 910 may further include, for example, standard mechanical designprocesses such as stress analysis, thermal analysis, mechanical eventsimulation, process simulation for operations such as casting, molding,and die press forming, etc. One of ordinary skill in the art ofmechanical design can appreciate the extent of possible mechanicaldesign tools and applications used in design process 910 withoutdeviating from the scope and spirit of the invention. Design process 910may also include modules for performing standard circuit designprocesses such as timing analysis, verification, design rule checking,place and route operations, etc.

Design process 910 employs and incorporates logic and physical designtools such as HDL compilers and simulation model build tools to processdesign structure 920 together with some or all of the depictedsupporting data structures along with any additional mechanical designor data (if applicable), to generate a second design structure 990.

Design structure 990 resides on a storage medium or programmable gatearray in a data format used for the exchange of data of mechanicaldevices and structures (e.g. information stored in a IGES, DXF,Parasolid XT, JT, DRG, or any other suitable format for storing orrendering such mechanical design structures). Similar to designstructure 920, design structure 990 preferably comprises one or morefiles, data structures, or other computer-encoded data or instructionsthat reside on transmission or data storage media and that whenprocessed by an ECAD system generate a logically or otherwisefunctionally equivalent form of one or more of the embodiments of theinvention shown in FIGS. 1-11. In one embodiment, design structure 990may comprise a compiled, executable HDL simulation model thatfunctionally simulates the devices shown in FIGS. 1-11.

Design structure 990 may also employ a data format used for the exchangeof layout data of integrated circuits and/or symbolic data format (e.g.information stored in a GDSII (GDS2), GL1, OASIS, map files, or anyother suitable format for storing such design data structures). Designstructure 990 may comprise information such as, for example, symbolicdata, map files, test data files, design content files, manufacturingdata, layout parameters, wires, levels of metal, vias, shapes, data forrouting through the manufacturing line, and any other data required by amanufacturer or other designer/developer to produce a device orstructure as described above and shown in FIGS. 1-11. Design structure990 may then proceed to a stage 995 where, for example, design structure990: proceeds to tape-out, is released to manufacturing, is released toa mask house, is sent to another design house, is sent back to thecustomer, etc.

The method as described above is used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case, the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements in the claims, if applicable, areintended to include any structure, material, or act for performing thefunction in combination with other claimed elements as specificallyclaimed. The description of the present invention has been presented forpurposes of illustration and description, but is not intended to beexhaustive or limited to the invention in the form disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the invention.The embodiment was chosen and described in order to best explain theprincipals of the invention and the practical application, and to enableothers of ordinary skill in the art to understand the invention forvarious embodiments with various modifications as are suited to theparticular use contemplated. Accordingly, while the invention has beendescribed in terms of embodiments, those of skill in the art willrecognize that the invention can be practiced with modifications and inthe spirit and scope of the appended claims.

What is claimed:
 1. A method of forming a semiconductor structure,comprising: forming a sacrificial conductive material layer; forming atrench in the sacrificial conductive material layer; forming aconductive feature in the trench; removing the sacrificial conductivematerial layer selective to the conductive feature; and forming aninsulating layer around the conductive feature to embed the conductivefeature in the insulating layer.
 2. The method of claim 1, furthercomprising: forming a second sacrificial conductive material layer onthe sacrificial conductive material layer and the conductive feature;forming a second trench in the second sacrificial conductive materiallayer; and forming a second conductive feature in the second trench andcontacting the conductive feature.
 3. The method of claim 2, furthercomprising removing the second sacrificial conductive material layerselective to the second conductive feature.
 4. The method of claim 3,wherein the forming the insulating layer comprises forming theinsulating layer around the conductive feature and the second conductivefeature such that the conductive feature and the second conductivefeature are embedded in the insulating layer.
 5. The method of claim 1,wherein the forming the conductive feature in the trench compriseselectroplating.
 6. The method of claim 5, further comprising using thesacrificial conductive material layer as at least one of a seed materialand an anode for the electroplating.
 7. The method of claim 5, furthercomprising forming the conductive feature directly on the sacrificialconductive material layer which is devoid of an intermediate seed layer.8. The method of claim 5, wherein the removing the sacrificialconductive material layer comprises selectively etching the conductivematerial layer.
 9. The method of claim 8, wherein one of: forming thesacrificial conductive material layer comprises depositing W/Ta/Ti,forming the conductive feature comprises depositing Cu, and removing thesacrificial conductive material layer comprises etching using XeF₂;forming the sacrificial conductive material layer comprises depositingAl, forming the conductive feature comprises depositing Au, and removingthe sacrificial conductive material layer comprises using HCl; andforming the sacrificial conductive material layer comprises depositingAl, forming the conductive feature comprises depositing Cu, and removingthe sacrificial conductive material layer comprises using H₃PO₄.
 10. Themethod of claim 1, further comprising: forming an insulating cap on thesacrificial conductive material layer; forming the trench through theinsulating cap; and removing the insulating cap after the forming theconductive feature in the trench.
 11. The method of claim 1, furthercomprising: forming a diffusion barrier layer on exposed surfaces of theconductive feature after the removing the sacrificial conductivematerial layer; and forming the insulating layer on the diffusionbarrier layer.
 12. A method of forming a semiconductor device,comprising: forming a first conductive material layer on one of a lowerinterconnect level and a substrate; forming first trenches in the firstconductive material layer; filling the first trenches with a firstconductor to form first conductive features; forming a second conductivematerial layer on the first conductive material layer; forming secondtrenches in the second conductive material layer; filling the secondtrenches with a second conductor to form second conductive features;removing the first and second conductive material layers leaving thefirst and second conductive features; and forming an insulating layeraround the first and second conductive features such that the first andsecond conductive features are embedded in the insulating layer.
 13. Themethod of claim 12, wherein: the first conductive features comprise oneof lines, wires, and interconnects; and the second conductive featurescomprise vias.
 14. The method of claim 12, wherein the filling the firsttrenches is performed using an electroplating process.
 15. The method ofclaim 14, further comprising using the first conductive material layeras at least one of a seed material and an anode for the electroplating.16. The method of claim 12, wherein the removing the first and secondconductive material layers comprises etching the first and secondconductive material layers selective to the first and second conductivefeatures.
 17. The method of claim 12, further comprising forming adiffusion barrier layer on exposed surfaces of the first and secondconductive features after the removing the first and second conductivematerial layers and prior to the forming the insulating layer.
 18. Themethod of claim 12, further comprising at least one of: forming thefirst conductive features directly on the first conductive materiallayer without an intermediate seed layer; and forming the secondconductive features directly on the second conductive material layerwithout a seed layer.
 19. The method of claim 12, further comprising:forming an insulating cap on the first conductive material layer;forming the first trenches through the insulating cap; and removing theinsulating cap after the forming the first conductive features.
 20. Asemiconductor structure, comprising: an electroplated conductive featureembedded in an insulating layer, wherein the structure is devoid of aseed layer between the electroplated conductive feature and theinsulating layer, the electroplated conductive feature comprises one ofa via and a wire, and the insulating layer comprises an interconnectlevel.